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| PD - 91480B IRF7313 l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET(R) Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.029 3 6 4 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Description SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range 30 20 6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.8 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 Units C/W 9/12/02 IRF7313 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 1.0 Typ. 0.022 0.023 0.032 14 22 2.6 6.4 8.1 8.9 26 17 650 320 130 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.029 V GS = 10V, ID = 5.8A 0.046 V GS = 4.5V, ID = 4.7A V V DS = V GS, ID = 250A S V DS = 15V, ID = 5.8A 1.0 V DS = 24V, VGS = 0V A 25 V DS = 24V, VGS = 0V, TJ = 55C 100 V GS = 20V nA -100 V GS = -20V 33 I D = 5.8A 3.9 nC V DS = 15V 9.6 V GS = 10V, See Fig. 10 12 V DD = 15V 13 I D = 1.0A ns 39 R G = 6.0 26 R D = 15 V GS = 0V pF V DS = 25V = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 2.5 A 30 1.0 68 87 V ns nC 0.78 45 58 Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. max. junction temperature. ( See fig. 11 ) ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF7313 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 10 3.0V 3.0V 1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 V DS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics VDS 100 100 I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C 10 ISD , Reverse Drain Current (A) TJ = 150C 10 TJ = 25C 1 3.0 3.5 4.0 VDS = 10V 20s PULSE WIDTH 4.5 5.0 A 1 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 A 1.6 VGS , Gate-to-Source Voltage (V) V SD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7313 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.8A RDS (on) , Drain-to-Source On Resistance () 2.0 0.040 0.036 V GS = 4.5V 1.5 0.032 1.0 0.028 0.5 0.024 V GS = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.020 0 10 20 30 40 A TJ , Junction Temperature ( C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance () E AS , Single Pulse Avalanche Energy (mJ) 0.12 200 TOP 160 0.10 BOTTOM IID D 1.8A 3.2A 4.0A 0.08 120 0.06 I D = 5.8A 0.04 80 0.02 40 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V GS , Gate-to-Source Voltage (V) Starting T J , Junction Temperature (C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF7313 1200 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 5.8A VDS = 15V 16 C, Capacitance (pF) 900 Ciss Coss 12 600 8 300 Crss 4 0 1 10 100 A 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7313 Package Outline SO8 Outline D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) L 8X 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO8 EXAMPLE : THIS IS AN IRF7101 DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK XXXX WAFER LOT CODE (LAST 4 DIGITS) 312 INTERNATIONAL RECTIFIER LOGO F7101 TOP PART NUMBER BOTTOM IRF7313 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/02 |
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